Highly efficient long-lived AIGaAs lasers fabricated by silicon impurity-induced disordering

R. L. Thornton; Robert D. Burnham; Thomas L. Paoli

doi:10.1364/CLEO.1986.TUQ4

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1986),
paper TUQ4
•https://doi.org/10.1364/CLEO.1986.TUQ4

Highly efficient long-lived AIGaAs lasers fabricated by silicon impurity-induced disordering

R. L. Thornton, Robert D. Burnham, and Thomas L. Paoli

Conference on Lasers and Electro-Optics 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-09-2

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Diode Laser Devices (TUQ)

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R. L. Thornton, R. D. Burnham, and T. L. Paoli, "Highly efficient long-lived AIGaAs lasers fabricated by silicon impurity-induced disordering," in Conference on Lasers and Electro-Optics, G. Bjorklund, E. Hinkley, P. Moulton, and D. Pinnow, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper TUQ4.

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Abstract

Buried-heterostructure lasers fabricated by the process of impurity-induced disordering are currently a topic of intense investigation. Lasing devices have been demonstrated using both silicon^1,2 and zinc^3,4 as the disordering species.

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