Abstract
A high-power laser emisson of more than 10 mW is required as the light source for laser printers, optical recording systems, and so on. Here we report on a visible gain-guided AIGaAs laser grown by metal-organic chemical vapor deposition (MOCVD) with a tapered stripe (TAPS) geometry, as shown in Fig. 1,1 which has been operated up to 60 mW (cw) and 100 mW (pulsed), in the fundamental transverse mode. Since the thickness of the active layer has been designed to be <500 Å, single-lobed far-field patterns parallel to the Junction have been realized, keeping the lasing spectra multimode by means of an antireflective coating on the front facet and a reflective coating on the rear facet. These characteristics are desirable for obtaining good coupling efficiency with the optical lens and a stable SNR even in the presence of optical feedback or changes in temperature.
© 1986 Optical Society of America
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