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Picosecond electrooptic sampling in GaAs integrated circuits

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Abstract

The rapid increase in the speed of integrated circuits (ICs) in recent years, coupled with limitations imposed by the use of conventional electronic instrumentation and circuit parasitics associated with diagnostic electrical contacts, has necessitated the use of novel methods for the precise measurement and characterization of such ICs. A large number of picosecond optical and optoelectronic techniques have recently been proposed and demonstrated,1,2 including the use of electrooptic sampling3 for the measurement2 of on-chip waveforms in GaAs ICs. In this work we demonstrate the use of picosecond electrooptic sampling for the precise measurement of relative timing between waveforms at different points internal to a GaAs integrated circuit. In particular, we report precise pulse propagation and switching characteristics for both the 1-to-0 and 0-to-1 transitions in digital ICs of buffered FET logic design,1,4 from which single gale propagation delays of 73 ± 3 ps are inferred for the chosen inverter gates.

© 1986 Optical Society of America

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