Abstract
Semiconductor optical amplifiers are promising devices for various future optical communication and signal processing systems.1 Fabry-Perot (F.-P.) amplifiers (injection lasers driven just below threshold) may be used in some applications. Although high gain can be achieved in such amplifiers,2 they suffer from an extremely narrow bandwidth (a few gigahertz), polarization-dependent gain, low output power, and extreme sensitivity to changes in their operating conditions. The enormous intrinsic bandwidth (thousands of gigahertz) of the semiconductor material will be fully usable only when traveling wave (TW) amplifiers3,4 (semiconductor laser chips with ideally zero facet reflectivities5) are developed. These wideband amplifiers have in addition the potential for high output power and insensitivity of the gain to operating conditions and polarization.
© 1986 Optical Society of America
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