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Operation of a GaAs-AIAs optical logic gate fabricated completely by molecular beam epitaxy

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Abstract

A nonlinear Fabry-Perot etalon fabricated entirely by molecular beam epitaxy (MBE) when operated as a pump-probe optical logic gate1 has shown 5:1 contrast with <20 pJ incident. The device should be especially well suited for optical bistability.2 However, this mode of operation has not yet been tried. The design consists of ten pairs of quarterwave thickness AlAs and GaAs layers grown on a GaAs substrate followed by a ~2-μm GaAs spacer layer and seven more quarterwave pairs. The mirrors formed by the quarter-wave stacks both have ~90% reflectivity. Fewer layers are needed on the second grown mirror due to the higher intrinsic reflectivity at the GaAs-air interface compared with that on the substrate side. The GaAs spacer was intentionally wedged to provide tunability of the transmission peak. The substrate in its present form is unsulted for transmitting either the pump or probe beams, so we used the reflected probe signal as the output.

© 1986 Optical Society of America

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