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Conferences > CLEO > 1985 > WH > WH3

15-GHz direct-modulation bandwidth of vapor phase regrown 1.3-μm InGaAsP buried heterostructure lasers

C. B. SU, V. LANZISERA, W. POWZINIK, E. MELAND, R. OLSHANSKY, and R. B. LAUER

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Abstract

Very high-frequency direct modulation of AlGaAs and InGaAsP diode lasers has been reported.1,2 An intrinsic modulation bandwidth of 12.5 GHz of 1.3-μm InGaAsP vapor phase regrown buried hetero-structure lasers (VPR-BH) under pulse bias operation was demonstrated.2 A small-signal modulation bandwidth of a 15-GHz record is reported for the VPR-BH lasers operated at a pulse bias optical power of only 7.5 mW/facet.

© 1985 Optical Society of America

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