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Conferences > CLEO > 1985 > TUK > TUK2

High-speed parallel-field electroabsorption in GaAs/GaAIAs multiple quantum wells

D. A. B. MILLER, W. H. KNOX, D. S. CHEMLA, T. C. DAMEN, P. M. DOWNEY, J. E. HENRY, A. C. GOSSARD, and W. WIEGMANN

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Abstract

The room-temperature exciton resonances in GaAs/GaAIAs multiple quantum well (MOW) material enable us to exploit many physical effects previously restricted to low-temperature bulk semiconductors. In particular, we report the measurement of the effect of electric fields parallel to the quantum well layers on optical absorption, an effect now clearly distinct from that arising with perpendicular fields.1 Furthermore, we have tested the resulting optical modulation down to a 30-psec time scale, faster than any previous MQW modulation.

© 1985 Optical Society of America

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