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Conferences > CLEO > 1985 > TUJ > TUJ2

Compound laser chemical vapor deposition: varlation of composition and microstructure with process parameters

F. SHAAPUR, S. M. COPLEY, and S. D. ALLEN

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Abstract

SiC was chosen as a model for compound laser chemical vapor deposition (LCVD) because of its importance as a wear-resistant and passivating film material and because several types of reactant system are available for SiC deposition. Laser chemical vapor deposition SiC films were deposited on SiO2, Si, and SiC substrates from several organosilanes or from mixtures of SiH4 or SiCl4 and a hydrocarbon.

© 1985 Optical Society of America

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