Rate equations analysis of an injection-locked semiconductor laser

P. GALLION; G. DEBARGE

doi:10.1364/CLEO.1985.TUI4

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1985),
paper TUI4
•https://doi.org/10.1364/CLEO.1985.TUI4

Rate equations analysis of an injection-locked semiconductor laser

P. GALLION and G. DEBARGE

Conference on Lasers and Electro-Optics 1985

Baltimore, Maryland United States
21–24 May 1985
ISBN:

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Optical Communication Systems: 2 (TUI)

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P. GALLION and G. DEBARGE, "Rate equations analysis of an injection-locked semiconductor laser," in Conference on Lasers and Electro-Optics, A. Gara, C. Giuliano, D. Auston, and R. Jacobs, eds., OSA Technical Digest (Optica Publishing Group, 1985), paper TUI4.

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Abstract

Plane-wave and slowly varying envelope approximations of the field in an optically injected cavity lead to generalized rate equations^1,2 for the total photon number P and the phase ϕ of the lasing field in the injected cavity.

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