Abstract

It has recently been shown that LiNbO₃ doped with 5 % MgO (MgO:LiNbO₃) has a substantially reduced photorefractive response compared with undoped LiNbO₃.¹ This material is thus very promising for improving the efficiency of linear and nonlinear guided wave devices which have previously been affected by photorefractive-index damage. We have studied the proton-exchange process in MgO:LiNbO₃ and undoped congruent LiNbO₃ and compared our results for the two materials. Results were similar, with the most significant differences being increased resistance of the y face to etching and lower diffusion coefficients in the doped material.

© 1985 Optical Society of America