Abstract

Recently laser-assisted chemical etching techniques have attracted attention for material processing of metals. Here we report that Al can be rapidly etched in Cl₂ by using a pulsed excimer laser at 308 nm with etch rates up to 0.3 μm/sec. The etching mechanism is a chemical reaction of Al and Cl₂ to form aluminum chloride followed by thermal ablation of the chloride with laser pulses. No photolytic effects were observed.

© 1985 Optical Society of America