Abstract

We have developed a new approach to microetching of GaAs which is based on liquid-phase deep-UV laser chemistry. The etching rate is sufficiently fast that very low laser powers can be readily used, thereby preventing heating of the solution or the solid substrate and permitting very deep vertical features to be made. The deep-UV wavelength initiates a different and more rapid interface chemistry than similar etching at visible wavelengths. As a result, all doping types of GaAs can be readily etched in a wide variety of etching solutions. Such micromachining of GaAs by wet etching is an important process for microsensors and electrooptical device fabrication.

© 1984 Optical Society of America