Abstract

The results of cw CO2 laser annealing on ion-implanted silicon photodiodes are demonstrated. Compared with furnace annealing, the laser annealed diodes have a shorter wavelength of maximum responsivity and higher blue-light sensitivity (Fig. 1). Meanwhile laser annealing has several advantages including high yield, better repeatability, and rather wide technological parameters (Fig. 2). From the viewpoint of internal physical characteristics, the shift of junction plane for laser-annealed devices is quite small, and the surface carrier concentration is higher because laser annealing provides higher substitutionality and electrical activation of implanted atoms. Experimental results revealed the potential for practical applications of cw CO2 laser annealing.

© 1984 Optical Society of America

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