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Photo-assisted CVD of Si film using a CO2 laser

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Abstract

CO2 laser chemical vapor deposition (CVD) has a practical advantage because it utilizes an efficient and readily available laser. Although single photons at 10.6 µm cannot break chemical bonds of source gas molecules commonly used for deposition of silicon films, the CO2 laser has been used to deposit large area silicon films.1-4 Its potential applications include fabrication of solar cells and electrophotographic films. Both cw and pulse lasers were used. Laser beams are either perpendicular or parallel to the substrates. To obtain good films, substrates are normally heated in a 200-500°C range.

© 1984 Optical Society of America

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