As previously reported,1,2 the CO2 laser-induced photodissociation of silane provides an efficient method for good quality hydrogenated amorphous silicon (a-Si:H) deposition. The applicability of this technique to the fabrication of electronic devices is, however, contingent on the feasibility of performing both p and n doping of the material. The dopability of photoproduced a-Si:H by phosphorous and boron ion implantation has been recently demonstrated,2 but the final goal is to prove the possibility of one- step doping that permits the production of multilayered structures of p,n and intrinsic materials. In a flux reactor designed to deposit a-Si:H films by means of resonant absorption of a CO2 laser radiation, small amounts of diborane and phosphine have been added to the reactant mixture.

© 1984 Optical Society of America

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