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Monolithic integration of a terraced laser diode, photomonitor, and electric circuits on semi-insulating GaAs

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Abstract

Optoelectronic integration, i.e., integration of optical devices with electronic circuits, is the most realistic solution to the demand for high-speed multifunctional compact devices in optical communication and data processing.1,2 This paper demonstrates the monolithic integration of a terraced laser diode (LD), a monitoring photodetector (PD), a modulation circuit and constant current laser drive circuit, and an amplification circuit for the monitor on a semi-insulating (SI) GaAs substrate. This is the horizontal structure of integration,3 where the electric current is fed to and taken from only one side of the substrate.

© 1983 Optical Society of America

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