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Conferences > CLEO > 1983 > WG > WG3

Highly stable operation of 1.3-μm InGaAsP double-channel planar BH laser diodes at high temperature and high power

Masafumi Seki, Shigeru Murata, Kohroh Kobayashi, Shoji Katayama, Kuniakira Iwamoto, and Hiroo Yonezu

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Abstract

Most 1.3-μm wavelength InGaAsP laser diodes have hardly shown a stable operation at a high ambient temperature of ~70°C because of the high- temperature dependence of operating current. Double-channel planar buried-heterostructure laser diode (DC-PBH LD), as reported elsewhere,1 has many specific advantages, such as (1) low-threshold current, (2) high efficiency, (3) high power, and (4) high-temperature operation capability. This paper reports that the high reliability of DC-PBH LDs can be obtained even at high temperature from accelerated life tests.

© 1983 Optical Society of America

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