Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1983 > WB > WB3

InGaAsP injection lasers with wavelengths as short as 620 nm at room temperature

Akira Fujimoto, Mikihiko Shimura, and SeIsuke Hinoda

Not Accessible

Your library or personal account may give you access

Abstract

An ln(1-x)GaxAszP(1-z) alloy is of great interest for light emitting devices in the visible spectrum region as well as the IR region. The lattice-matched alloys for ternary GaAs1-yPy have the largest direct band gaps over the entire composition range. To obtain lasers with wavelengths of 620-650 nm, we have grown InGaAsP double heterostructures (DH) on (100) GaAs0.61P0.39 substrates prepared by vapor- phase epitaxy on GaAs.

© 1983 Optical Society of America

PDF Article
More Like This
Room-Temperature Operation of GaInAsp/Inp Double-Heterostructure Diode Lasers Emitting at 1.1 µm*

J. J. Hsieh
MB2 Integrated Optics (IOPT) 1976

CM and High-Speed Single-Longitudinal-Mode Operation of a Short InGaAsP Injection Laser with External Coupled Cavity

Chinlon Lin and C. A. Burrus
PD5 Optical Fiber Communication Conference (OFC) 1983

Growth and characterization of visible diode lasers

J. R. SHEALY and D. P. BOUR
WU3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use