Abstract
The high-frequency characteristics of injection lasers are influenced by a number of factors, including carrier diffusion-induced damping1 and circuit parasitics.2,3 An efficient way to determine the high-frequency response is to use a circuit model of the device.3-4 However, all circuit models reported so far have been based on simple rate equations in which the effects of carrier diffusion are neglected. This paper reports a new small-signal circuit model which includes diffusion-induced damping.
© 1983 Optical Society of America
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