Abstract
An excimer UV laser is used to photochemically deposit thin films of SiO2, silicon nitride, and silicon oxynitrides at low temperature (50-450°C). Deposition rates in excess of 1000 Å/min over large areas and conformal coverage over vertical walled steps were demonstrated over a wide range of process parameters. The films exhibit very low defect density and high breakdown voltage and have been characterized using IR spectrophotometry, AES, and C-V and l-V analysis on Si and InP substrates. The films show excellent adhesion and compressive stress. Device compatibility has been studied by using photodeposited films as diffusion masks, interlayer dielectrics, and passivation layers in production CMOS devices. Phtodeposited AI2O3 has also been studied for device insulation and radiation hard passivation layers.
© 1983 Optical Society of America
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