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Conferences > CLEO > 1983 > TUA > TUA3

Use of laser-stimulated MOCVD growth of GaAs in electronic devices

W. Roth, H. Krautle, A. Krings, H. Schumacher, and H. Веnеking

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Abstract

Laser-stimulated growth of GaAs is carried out in an MOCVD system.1 The optimum conditions are a temperature of 450°C, 4000-cm3/min flow of hydrogen, 7.5 × 10–5 parts trimethylgallium (TMG), and 3 × 10–3 parts AsH3. In these conditions growth oniy takes place in the laser-stimulated areas. Stimulation is carried out by 3-nsec pulses with an energy density of 120 mJ/cm2. The repetition frequency of the pulses is 10 Hz.

© 1983 Optical Society of America

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