Abstract

We have experimentally investigated variations in ellipsometric parameters ψ, Δ, reflectivity R, surface sheet resistance ρ with radiation time by cw CO₂ laser annealing (Fig. 1). The output power of the CO₂ laser was 40 W and the beam diameter ~8 mm; 150-keV As⁺ ions were implanted at a dose of 1 × 10¹⁶/cm² for 6-8 Ω 1 cm (100) P-type Si. The experiments showed that ψ,Δ,R,ρ did not obviously change in the initial stage but sharply decreased to the corresponding values of the crystal silicon after 5-sec radiation.

© 1982 Optical Society of America