Optical lasing micro-cavities fabricated in high Sn content active GeSn layers grown on GeSn step-graded buffers

V. Reboud; M. Bertrand; Q. M. Thai; J. Chrétien; N. Pauc; R. Khazaka; A. Quintero Colmenares; F. Armand Pilon; H. Sigg; P. Rodriguez; A. Chelnokov; J. M. Hartmann; V. Calvo

doi:10.1364/BGPPM.2018.JTu5A.7

Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF)
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper JTu5A.7
•https://doi.org/10.1364/BGPPM.2018.JTu5A.7

Optical lasing micro-cavities fabricated in high Sn content active GeSn layers grown on GeSn step-graded buffers

V. Reboud, M. Bertrand, Q. M. Thai, J. Chrétien, N. Pauc, R. Khazaka, A. Quintero Colmenares, F. Armand Pilon, H. Sigg, P. Rodriguez, A. Chelnokov, J. M. Hartmann, and V. Calvo

Bragg Gratings, Photosensitivity and Poling in Glass Waveguides and Materials 2018

Zurich Switzerland
2–5 July 2018
ISBN: 978-1-943580-43-9

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Joint Poster Session II (JTu5A)

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V. Reboud, M. Bertrand, Q. M. Thai, J. Chrétien, N. Pauc, R. Khazaka, A. Q. Colmenares, F. A. Pilon, H. Sigg, P. Rodriguez, A. Chelnokov, J. M. Hartmann, and V. Calvo, "Optical lasing micro-cavities fabricated in high Sn content active GeSn layers grown on GeSn step-graded buffers," in Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF), OSA Technical Digest (online) (Optica Publishing Group, 2018), paper JTu5A.7.

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Abstract

We study optically pumped lasing in micro-cavities with high Sn content active GeSn layers. We show that the crystalline quality of the GeSn active layers are greatly improved when grown on GeSn step-graded buffers instead of directly on Ge strained relaxed buffers. High Sn content, up to 16% of Sn, was reached leading to lasing operation temperature up to 180K in micro-disks, paving the way to the use of GeSn in monolithically integrated light source devices.

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