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Rapid heat treatment for photosensitivity locking in deuterium-loaded planar optical waveguides

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Abstract

Permanent deuterium enhanced photosensitivity is demonstrated in Ge-doped silica-on-silicon thin film layers by applying a rapid thermal process. The long term photosensitivity locking obtained should enable the development of all UV-written devices limited to date by the rapid deuterium outdiffusion during fabrication.

© 2001 Optical Society of America

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