Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature

Not Accessible

Your library or personal account may give you access

Abstract

We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-μm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluence, spectral- linewidth-narrowing, excitation-length.

© 2018 The Author(s)

PDF Article
More Like This
Investigation of Blueshift of Photoluminescence Emission Peak in InGaN/GaN Multiple Quantum Wells

Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, and Nelson Tansu
JWA70 CLEO: Applications and Technology (CLEO:A&T) 2011

Room Temperature Polariton Lasing from GaN Nanowire Array in a Dielectric Microcavity

Bo Xiao, Junseok Heo, Shafat Jahangir, and Pallab Bhattacharya
CW3G.4 CLEO: Science and Innovations (CLEO:S&I) 2013

Room Temperature Excitonic Nonlinear Absorption in GaAs/AlGaAs Multiple Quantum Well Structures Grown By Metalorganic Chemical Vapor Deposition (MOCVD)*

H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, and E. Garmire
FA2 Photonic Switching (PS) 1987

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved