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Studies on Current and Temperature Dependence of Spontaneous Emission from 2-µm InGaSb/AlGaAsSb Lasers

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Abstract

Spontaneous emission (SE) as a function of injection current and temperature, have been studied out from the sidewall of a working 2-μm InGaSb/AlGaAsSb single quantum well (SQW) laser to investigate the carrier recombination behaviors.

© 2017 Optical Society of America

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