Abstract

Selective ablation of materials has enormous interest for a wide range of applications. This work deals with the selective ablation of Aluminum thin film in amorphous silicon thin film photovoltaic modules in direct scribing configuration using Diode Pumped Solid State Lasers (DPSS) emitting at 355 nm. The selective removal of Aluminum is performed with a picosecond laser source working at 355 nm of wavelength. The combination of short pulse duration with UV wavelength 355 nm produces less thermal effects in the material, achieving better results in the final laser process. These results are in good agreement with the ablation threshold values for the material at the laser pulse-width and wavelength proved. The assessment of selective ablation is done attending to the electrical properties of the devices and to its morphology. Finally a good selective ablation of the Aluminum layer is achieved with no damage of the electrical performance of the device.

© 2013 Optical Society of America

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