Improved ZnGeP2 for High-Power OPO’s

P. G. Schunemann; P.A. Budni; L. Pomeranz; M.G. Knights; T.M. Pollak; E.P. Chicklis

doi:10.1364/ASSL.1997.PC6

Advanced Solid State Lasers
OSA Trends in Optics and Photonics Series (Optica Publishing Group, 1997),
paper PC6
•https://doi.org/10.1364/ASSL.1997.PC6

Improved ZnGeP₂ for High-Power OPO’s

P. G. Schunemann, P.A. Budni, L. Pomeranz, M.G. Knights, T.M. Pollak, and E.P. Chicklis

Advanced Solid State Lasers 1997

Orlando, Florida United States
ISBN: 1-55752-468-8

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Mid-infrared Sources based on Parametric Converters (PC)

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P. G. Schunemann, P. A. Budni, L. Pomeranz, M. G. Knights, T. M. Pollak, and E. P. Chicklis, "Improved ZnGeP2 for High-Power OPO’s," in Advanced Solid State Lasers, C. Pollock and W. Bosenberg, eds., Vol. 10 of OSA Trends in Optics and Photonics Series (Optica Publishing Group, 1997), paper PC6.

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Abstract

Recent ZnGeP₂ growth improvements have cut near-IR absorption by 3- to 5-fold and increased OPO conversion efficiencies by 50% over the best crystals reported previously.

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