Excited-State Absorption Measurements in Cr4+-Doped Mg2SiO4 and Y2SiO5 Laser Materials

N.V. Kuleshov; V.G. Shcherbitsky; V.P. Mikhailov; S. Hartung; T. Danger; S. Kück; K. Petermann; G. Huber

doi:10.1364/ASSL.1996.TL7

Advanced Solid State Lasers
OSA Trends in Optics and Photonics Series (Optica Publishing Group, 1996),
paper TL7
•https://doi.org/10.1364/ASSL.1996.TL7

Excited-State Absorption Measurements in Cr⁴⁺-Doped Mg₂SiO₄ and Y₂SiO₅ Laser Materials

N.V. Kuleshov, V.G. Shcherbitsky, V.P. Mikhailov, S. Hartung, T. Danger, S. Kück, K. Petermann, and G. Huber

Advanced Solid State Lasers 1996

San Francisco, California United States
ISBN: 1-55752-370-3

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N. V. Kuleshov, V. G. Shcherbitsky, V. P. Mikhailov, S. Hartung, T. Danger, S. Kück, K. Petermann, and G. Huber, "Excited-State Absorption Measurements in Cr4+-Doped Mg2SiO4 and Y2SiO5 Laser Materials," in Advanced Solid State Lasers, S. Payne and C. Pollack, eds., Vol. 1 of OSA Trends in Optics and Photonics Series (Optica Publishing Group, 1996), paper TL7.

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Abstract

Polarized cw and time-resolved ESA spectra were measured in Cr⁴⁺-doped Mg₂SiO₄ and Y₂SiO₅ in the 200-2200 nm spectral region. Saturation of the ground state absorption in the wavelength range 550800 nm and excited-state absorption in the 200-450 nm range were observed in both crystals. Excited- state absorption in the infrared due to the ³T₂(³F) - ³T₁(³F) transition extending from 1100 nm to 2100 nm for Ella and Ellc light polarizations and in the visible at about 700 nm (Ella) due to the ³T₂(³F) - ³T₁(³P) transition, as well as stimulated emission between 1100 nm and 1500 nm for Ellb polarization were observed in Cr⁴⁺:Mg₂SiO₄.

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