Efficient, Low-Threshold Ion-Implanted Channel Waveguide Lasers

S. J. Field; D. C. Hanna; A. C. Large; D. P. Shepherd; A. C. Tropper; P. J. Chandler; P. D. Townsen; L. Zhang

doi:10.1364/ASSL.1992.DL10

Advanced Solid State Lasers
OSA Proceedings Series (Optica Publishing Group, 1992),
paper DL10
•https://doi.org/10.1364/ASSL.1992.DL10

Efficient, Low-Threshold Ion-Implanted Channel Waveguide Lasers

S. J. Field, D. C. Hanna, A. C. Large, D. P. Shepherd, A. C. Tropper, P. J. Chandler, P. D. Townsen, and L. Zhang

Advanced Solid State Lasers 1992

Santa Fe, New Mexico United States
ISBN: 1-55752-224-3

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Diode-Pumped Lasers (DL)

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S. J. Field, D. C. Hanna, A. C. Large, D. P. Shepherd, A. C. Tropper, P. J. Chandler, P. D. Townsen, and L. Zhang, "Efficient, Low-Threshold Ion-Implanted Channel Waveguide Lasers," in Advanced Solid State Lasers, L. Chase and A. Pinto, eds., Vol. 13 of OSA Proceedings Series (Optica Publishing Group, 1992), paper DL10.

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Abstract

He⁺ Ion implantation has been used to create channel waveguides in Nd doped YAG and GGG. Low threshold, efficient, diode-pumped laser performance is reported.

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