Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Photorefractive properties of InGaAs/GaAs multiple quantum well structure

Not Accessible

Your library or personal account may give you access

Abstract

We fabricate semi-insulating lnGaAs/GaAs multiple quantum wells and measure the two-wave mixing gain and the four-wave mixing diffraction efficiency at the wavelengths around the excitonic resonance of 0.93 µm. The important properties including spatial resolution, saturation intensity and response time are experimentally investigated. The photorefractive response time of 100 µs is obtained at the wavelength of 924.5 nm with the intensity of 7 mW /cm2.

© 1999 Optical Society of America

PDF Article
More Like This
Photorefractive wave mixing in semi-insulating InGaAs/GaAs multiple quantum wells

S. Iwamoto, H. Kageshima, T. Yuasa, M. Nishioka, T. Someya, Y. Arakawa, T. Shimura, and K. Kuroda
CWF44 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Electrooptic modulation in an InGaAs/GaAs strained layer multiple quantum well structure

T. E. Van Eck, P. Chu, W. S. C. Chang, and H. H. Wieder
WS1 OSA Annual Meeting (FIO) 1986

Photorefractive multiple quantum well device at 1064 nm and its application to adaptive vibration measurement

S. Iwamoto, S. Taketomi, M. Nishioka, T. Someya, Y. Arakawa, T. Shimura, and K. Kuroda
417 Photorefractive Effects, Materials, and Devices (PR) 2001

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved