We present temperature-dependent measurements of carrier transport in n-type Bi12SiO20 which were performed by holographic time-of-flight (HTOF) in diffusion mode. We measure a band mobility of photoexcited electrons of 3.5 0.4 cm2/ (Vs) at 300 K that increases monotonically to 7.5 1.3 cm2/ (Vs) as the temperature is decreased to 200 K. Our results are predicted by strong coupling polaron theory if the band mass of the electrons is chosen to be 2.0 electron masses as reported in [1, 2]. Below 200 K we observe a mobility which decreases with falling temperature.

© 1999 Optical Society of America

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