We investigate temperature dependence of the non-steady-state photocurrents and photoconductivity relaxation time in Bi12SiO20 crystal grown in an oxygen-free atmosphere. The activation energy of shallow level obtained from photocurrent measurements is ET = (0.45± 0.11) eV. Independent measurements of the temperature dependence of the relaxation time of photo-conductivity are in reasonable agreement with this estimation and give the value for ET = (0.56±0.01) eV.

© 1999 Optical Society of America

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