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  • Asia Optical Fiber Communication and Optoelectronic Exposition and Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper SuG2
  • https://doi.org/10.1364/AOE.2008.SuG2

High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

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Abstract

InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80oC for both 1310 nm and 1550 nm devices is demonstrated for the first time.

© 2008 Optical Society of America

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