Abstract
InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80oC for both 1310 nm and 1550 nm devices is demonstrated for the first time.
© 2008 Optical Society of America
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