MeV He Ion-Implanted Planar Waveguide in RTP Crystal

Gang Fu

doi:10.1364/AIOM.2011.AIThB8

Advances in Optical Materials
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper AIThB8
•https://doi.org/10.1364/AIOM.2011.AIThB8

MeV He Ion-Implanted Planar Waveguide in RTP Crystal

Gang Fu

Advances in Optical Materials 2011

Istanbul Turkey
16–18 February 2011
ISBN: 978-1-55752-904-6

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G. Fu, "MeV He Ion-Implanted Planar Waveguide in RTP Crystal," in Advances in Optical Materials, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper AIThB8.

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Abstract

A planar optical waveguide was formed in RbTiOPO₄(RTP) crystal by 3.0-MeV He-ion implantation with a dose of 1.0×10¹⁶ions/cm² at room temperature. RTP waveguide properties were investigated by using m-line and end-face coupling arrangements. The annealing process effectively removed the color centers and reduced the loss of waveguide.

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