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Conferences > AIOM > 2009 > AWA > AWA5
  • Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper AWA5
  • •https://doi.org/10.1364/AIOM.2009.AWA5

Optoelectronic properties of Germanium islands formed on Silicon using Stranski-Krastanov growth by MBE

L. Nataraj, N. Sustersic, M. Coppinger, F. Gerlein, J. Kolodzey, and S. G. Cloutier

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Abstract

We report on the optoelectronic properties of bulk Germanium islands formed on Silicon by Molecular Beam Epitaxy. More specifically, we will discuss the role of strains and doping in favoring efficient light-emission at telecommunication wavelengths.

© 2009 Optical Society of America

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