Abstract

This presentation gives an overview of recent advances in the 1^st- and 2^nd generation MEMS FPI processes for near- and mid- infrared (NIR-MIR) wavelength sensing applications for automotive- and process industry. The measured values for the 1^st generation NIR MEMS FPI devices for λ = 1.5 – 2.0 µm show FWHM = 15 nm at the optimization wavelength of 1750 nm. The 2^nd generation MEMS process for produced devices for NIR λ = 1.9 – 2.5 µm (FWHM = 17nm) and MIR λ = 2.9 – 3.6 µm (FWHM = 22nm). A novel NIR sensor based on the 2^nd generation MEMS FPI chips has been realized. The developed sensors are being validated for application in process control. Preliminary results show good signal levels, which allow following the status of esterification process.

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