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  • Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC)
  • OSA Technical Digest (Optica Publishing Group, 2020),
  • paper M4A.26
  • https://doi.org/10.1364/ACPC.2020.M4A.26

InGaN Visible Light Heterojunction Phototransistor

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Abstract

InGaN based heterojunction phototransistors with multiple-quantum-well collector and polarization-doped p-base were fabricated. The devices exhibit a 405/490-nm rejection ratio of more than 103 under 1 V bias. A peak responsivity of ~0.9 A/W was obtained, indicating a gain of ~2.7.

© 2020 The Author(s)

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