Large 10-dB Bandwidth and Low Insertion Loss Silicon Dual-ring Modulator

Hongxia Zhang; Xinhong Jiang; Ciyuan Qiu

Asia Communications and Photonics Conference (ACP) 2018
OSA Technical Digest (Optica Publishing Group, 2018),
paper Su3F.4

Large 10-dB Bandwidth and Low Insertion Loss Silicon Dual-ring Modulator

Hongxia Zhang, Xinhong Jiang, and Ciyuan Qiu

Asia Communications and Photonics Conference 2018

Hangzhou China
26–29 October 2018
ISBN: 978-1-5386-6158-1

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Silicon Photonics II (Su3F)

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H. Zhang, X. Jiang, and C. Qiu, "Large 10-dB Bandwidth and Low Insertion Loss Silicon Dual-ring Modulator," in Asia Communications and Photonics Conference (ACP) 2018, OSA Technical Digest (Optica Publishing Group, 2018), paper Su3F.4.

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Abstract

A silicon dual-ring modulator with 10-dB bandwidth of 0.08 nm and low insertion loss of 1.1 dB is experimentally demonstrated. The modulation speed of the dual-ring modulator can be as high as 20 Gb/s.

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