In recent years, the growing demand for silicon based light sources has boosted the research field of III-V/IV hybrid lasers. Here, the C/L-band light emission (1.53 μm–1.63 μm) of InAs/In0.25Ga0.75As quantum dots (QDs) epitaxially grown on Ge substrate by solid-source molecular beam epitaxy (MBE) is reported. By hybrid III–V/IV epitaxial growth, ultra-thin and anti-phase domains (APD) free III-V materials are achieved on Ge substrate. Step-graded InGaAs metamorphic buffer layers are applied to reduce the strain in InAs QDs in order to extend the emission wavelength. At last, a high quality InAs/In0.25Ga0.75As QD structure on Ge(001) substrate is obtained, which has a strong C/L-band emission centered at the wavelength of 1.6 μm with a full-width-half-maximum (FWHM) of 57 meV at room temperature.

© 2017 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription