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Conferences > ACPC > 2016 > AS1F > AS1F.6

High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Chao Zhao, Tien Khee Ng, Nini Wei, Bilal Janjua, Rami T. ElAfandy, Aditya Prabaswara, Chao Shen, Giuseppe Bernardo Consiglio, Abdulrahman Albadri, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi

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Abstract

The first droop-free, reliable, and high-power InGaN/GaN quantum-disks-in-nanowires light-emitting diode on molybdenum substrates was demonstrated. The high performance was achieved through the epitaxial growth of high-quality nanowires on the all-metal stack of TiN/Ti/Mo.

© 2016 Optical Society of America

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