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Conferences > ACPC > 2016 > AF2A > AF2A.80

Continuous-wave and Time-resolved Photoluminescence of GaN LED grown on amorphous SiC buffer

Chih-Hsien Cheng, Shuai Chen, Lingyu Wan, Zhe Chuan Feng, and Gong-Ru Lin

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Abstract

GaN LED grown upon amorphous SiC buffer is demonstrated. Its PL peak is red-shifted to 442 nm because of the decreased compressive strain induced by lattice mismatch when changing the SiC buffer to C-rich condition.

© 2016 Optical Society of America

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