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Conferences > ACPC > 2015 > ASu3B > ASu3B.2

DWELL based laser structure grown by LP-MOCVD using InGaP as p-doped cladding layer

Xin Gu, Qi Wang, Xiaomin Ren, Hao Liu, Guoming Mao, Shiwei Cai, Xia Zhang, and Yongqing Huang

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Abstract

A dot-in-well structure with InGaP p-doped cladding layer was grown by LP-MOCVD. The investigation of replacing the AlGaAs cladding layer by In0.49GaP as well as the optical properties of laser structure has been demonstrated.

© 2015 Optical Society of America

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