MOVPE Growth of High-quality AlGaN for Deep-ultraviolet Light Source

Hideto Miyake

doi:10.1364/ACPC.2014.AW4J.2

Asia Communications and Photonics Conference 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper AW4J.2
•https://doi.org/10.1364/ACPC.2014.AW4J.2

MOVPE Growth of High-quality AlGaN for Deep-ultraviolet Light Source

Hideto Miyake

Asia Communications and Photonics Conference 2014

Shanghai China
11–14 November 2014
ISBN: 978-1-55752-852-0

From the session
Material Growth (AW4J)

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H. Miyake, "MOVPE Growth of High-quality AlGaN for Deep-ultraviolet Light Source," in Asia Communications and Photonics Conference 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper AW4J.2.

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Abstract

We will present about the growth of AlN and Si-doped AlGaN multiplequantum wells (MQWs) on sapphire by lowpressure MOVPE. We also talk about fabrication of the prototype UV light-source using the Si-doped AlGaN MQWs as the target for EB excitation.

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