Abstract
The combination of luminescence spectroscopy - in particular at liquid He temperatures - with the high spatial resolution of a scanning transmission electron microscopy provides a unique, extremely powerful tool for the optical nano-characterization of semiconductors. Typical results which will be presented include nm-scale correlation of the structural and optical properties of different GaN nanorod sample.
© 2014 Optical Society of America
PDF ArticleMore Like This
R.A.R. Leute, T. Meisch, J. Wang, J. Biskupek, U. Kaiser, M. Müller, P. Veit, F. Bertram, J. Christen, and F. Scholz
WH3_4 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2013
Je-Hyung Kim, Young-Ho Ko, Suk-Min Ko, Su-Hyun Gong, and Yong-Hoon Cho
AW4A.4 Asia Communications and Photonics Conference (ACP) 2014
Peng Chen, Wenjie Wang, Zhiguo Yu, Bin Liu, Zi-Li Xie, Xiangqian Xiu, Zhenlong Wu, Feng Xu, Zhou Xu, Ping Han, Yi Shi, Rong Zhang, and Youdou Zheng
ATh1J.3 Asia Communications and Photonics Conference (ACP) 2014