Abstract
A separate-absorption-charge-multiplication Ge/Si avalanche photodiode was designed. The devices have high dark current at low reverse bias, because of surface impurity and rough sidewall. A guard-ring structure and in-situ doping was introduced to decrease leakage-current.
© 2014 Optical Society of America
PDF ArticleMore Like This
Y. Kang, Z. Huang, Y. Saado, J. Campbell, A. Pauchard, J. Bowers, and M.J. Paniccia
OWZ1 Optical Fiber Communication Conference (OFC) 2011
Mengyuan Huang, Pengfei Cai, Liangbo Wang, Tuo Shi, Wang Chen, Su Li, Guanghui Hou, Ching-yin Hong, and Dong Pan
Tu2C.2 Optical Fiber Communication Conference (OFC) 2014
Shaoteng Wu, Hao Zhou, Lin Zhang, Qimiao Chen, Liangxing Hu, and Chuan Seng Tan
ATh4G.5 CLEO: Applications and Technology (CLEO:A&T) 2021