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Conferences > ACPC > 2014 > ATh3A > ATh3A.44

Intersubband Transition in AlGaN/GaN step quantum wells at 3–5 μm

Xin Rong, Xinqiang Wang, Guang Chen, Ping Wang, Xiantong Zheng, Fujun Xu, and Bo Shen

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Abstract

We demonstrate intersubband absorptions and photocurrent response at wavelength of 3–5μm in nitride-based semiconductor step quantum wells. The structures consist of a 1.8nm thick Al0.5Ga0.5N barrier, a 1.8nm thick GaN well and a 16nm thick Al0.25Ga0.75N step barrier. With this approach, one can create a virtually flat band potential energy profile in the step barrier layers, which is confirmed by analysing the temperature dependence dark current results.

© 2014 Optical Society of America

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