Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure

Q. Q. Meng; H. Wang; H. Wang; B. Gao; B. Gao; C. Y. Liu; K. S. Ang; X. Guo; J. Gao

doi:10.1364/ACPC.2014.ATh3A.22

Asia Communications and Photonics Conference 2014
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper ATh3A.22
•https://doi.org/10.1364/ACPC.2014.ATh3A.22

Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure

Q. Q. Meng, H. Wang, B. Gao, C. Y. Liu, K. S. Ang, X. Guo, and J. Gao

Asia Communications and Photonics Conference 2014

Shanghai China
11–14 November 2014
ISBN: 978-1-55752-852-0

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Joint Poster Session (ATh3A)

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Q. Q. Meng, H. Wang, B. Gao, C. Y. Liu, K. S. Ang, X. Guo, and J. Gao, "Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure," in Asia Communications and Photonics Conference 2014, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper ATh3A.22.

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Abstract

An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.

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