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Conferences > ACPC > 2014 > ATh3A > ATh3A.2

Direct Growth of GaAs-based Long-wavelength (1.55μm) InGaAs/InGaAsP Multiple Quantum Wells Laser

Xibo Li, Yongqing Huang, Jun Wang, Xiaofeng Duan, Ruikang Zhang, Xiaomin Ren, Xia Zhang, and Qi Wang

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Abstract

InGaAs/InGaAsP multiple quantum wells laser structures materials are grown on semi-insulating GaAs substrates by MOCVD. A threshold current of 340mA and a slop efficiency of 0.29mW/mA are obtained for a device with 12μm-wide strip.

© 2014 Optical Society of America

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