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Conferences > ACPC > 2014 > ATh2A > ATh2A.1

Selective area growth of GaAs on silicon

Yunrui He, Jun Wang, Can Deng, Haiyang Hu, Qi Wang, Yongqing Huang, and Xiaomin Ren

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Abstract

The epitaxial growth of GaAs on patterned Si(001) substrates by MOCVD is presented. Effect of growth temperature and V/III ratio on coalescence is investigated. Meanwhile, changing total pressure can reduce the polycrystals generated on mask.

© 2014 Optical Society of America

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